Fudan ekibi tarafından geliştirilen ultra hızlı flash bellek entegrasyon teknolojisi: 20 nanosaniye ultra hızlı programlama, 10 yıl süreyle veri saklama
Gate.io 13th August news - Fudan University's Zhou Peng-Liu Chunsen team's previous research showed that the two-dimensional semiconductor structure can increase its speed by more than a thousand times, realizing disruptive nanosecond-level ultra-fast storage flash memory technology. However, how to achieve large-scale integration and move towards true practical applications is still extremely challenging. At the same time, the research team has developed a self-alignment process that does not rely on advanced lithography equipment, combined with the original innovative ultra-fast storage stack electric field design theory, and successfully realized a ultra-fast flash memory device with a channel length of 8 nanometers, which is currently the shortest channel flash memory device internationally, and has surpassed the physical size limit of silicon-based flash memory (about 15 nanometers). Supported by atomic-level thin layer channels, this ultra-small-sized device has a 20-nanosecond ultra-fast programming, 10-year non-volatile, one hundred thousand cycles of life, and polymorphic storage performance. This work will promote the industrial application of ultra-fast disruptive flash memory technology.
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Fudan ekibi tarafından geliştirilen ultra hızlı flash bellek entegrasyon teknolojisi: 20 nanosaniye ultra hızlı programlama, 10 yıl süreyle veri saklama
Gate.io 13th August news - Fudan University's Zhou Peng-Liu Chunsen team's previous research showed that the two-dimensional semiconductor structure can increase its speed by more than a thousand times, realizing disruptive nanosecond-level ultra-fast storage flash memory technology. However, how to achieve large-scale integration and move towards true practical applications is still extremely challenging. At the same time, the research team has developed a self-alignment process that does not rely on advanced lithography equipment, combined with the original innovative ultra-fast storage stack electric field design theory, and successfully realized a ultra-fast flash memory device with a channel length of 8 nanometers, which is currently the shortest channel flash memory device internationally, and has surpassed the physical size limit of silicon-based flash memory (about 15 nanometers). Supported by atomic-level thin layer channels, this ultra-small-sized device has a 20-nanosecond ultra-fast programming, 10-year non-volatile, one hundred thousand cycles of life, and polymorphic storage performance. This work will promote the industrial application of ultra-fast disruptive flash memory technology.